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A. Khamesra, R. Lal , J. Vasi, A. Kumar K. P. and J. K. O. Sin, “Device degradation of n-channel poly-Si TFT’s due to high-field, hot-carrier and radiation stressing,” 8th ...
Aatish Kumar Vasi, J. Cheng, B. Woo, J. C. S. Keywords: MOSFET Semiconductor device models Semiconductor process modelling Silicon-on-insulator: Issue Date:
Vasi, J. A. Kumar, K. P. Sin, K. O. Keywords: Degradation Electric variables measurement Ionizing radiation Hot carriers Low temperature effects Current voltage characteristics
Najeeb-ud-Din, Aatish Kumar, Mohan V.Dunga, V.Ramgopal Rao, J.Vasi, “Suppression of Parasitic BJT Action in ...
... S C Dutta Roy MembersR K Arora R K Patney Ranjan Bose Amit Patra Subhasis ChaudhuryRaj Senani B N Das B P Singh Subrat Kar B Sundara Rajan S K Koul K Thyagarajan Arun Kumar J Vasi Ranjan K ...
A. Khamesra, R. Lal , J. Vasi, A. Kumar K. P. and J. K. O. Sin, Device degradation of n-channel poly-Si TFTs due to high-field, hot-carrier and radiation stressing ...
Aatish Kumar Vasi, J. Cheng, B. Woo, J. C. S. Keywords: MOSFET Semiconductor device models Semiconductor process modelling Silicon-on-insulator: Issue Date:
Vasi, J. A. Kumar, K. P. Sin, K. O. Keywords: Degradation Electric variables measurement Ionizing radiation Hot carriers Low temperature effects Current voltage characteristics
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